This project design consists of galvanically isolated single channel gate driver IC and dedicated isolated DC-DC gate drive power supply with bipolar output +15V/-9V. This compact module can control IGBTs in inverters. The isolated high current IGBT gate driver module is a simple solution for power drivers, consisting of a gate driver chip 1ED3124MC12H and an isolated 2W DC-DC converter (R12P21509D). This module is optimized for high-frequency operations and can provide high gate driver currents up to 14A, making it suitable for applications such as half-bridge, full-bridge, and single IGBT.
Logic input: for the output switching behavior there are two possible input modes to control the IGBT. At non-inverting mode IN+ controls the driver output while IN- is set to low. At inverting mode IN- controls the driver output while IN+ is set to high. A minimum input pulse width is defined to filter occasional glitches.
This project design consists of galvanically isolated single channel gate driver IC and dedicated isolated DC-DC gate drive power supply with bipolar output +15V/-9V. This compact module can control IGBTs in inverters. The isolated high current IGBT gate driver module is a simple solution for power drivers, consisting of a gate driver chip 1ED3124MC12H and an isolated 2W DC-DC converter (R12P21509D). This module is optimized for high-frequency operations and can provide high gate driver currents up to 14A, making it suitable for applications such as half-bridge, full-bridge, and single IGBT.
Logic input: for the output switching behavior there are two possible input modes to control the IGBT. At non-inverting mode IN+ controls the driver output while IN- is set to low. At inverting mode IN- controls the driver output while IN+ is set to high. A minimum input pulse width is defined to filter occasional glitches.
Driver outputs: The output driver section uses MOSFETs to provide a rail-to-rail output. This feature permits that tight control of gate voltage during on-state and short circuit can be maintained as long as the driver’s supply is stable. Due to the low internal voltage drop, switching behavior of the IGBT is predominantly governed by the gate resistor. Furthermore, it reduces the power to be dissipated by the driver.
Single-channel 5.7 kV (rms) isolated gate driver IC with separate output, Galvanically isolated coreless transformer gate driver, For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs
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