This is a fully isolated half-bridge gate driver module that can be configured according to the user’s voltage and current requirements. The design consists of two galvanically isolated single-channel gate driver 1ED3124MC12H ICs and a dedicated 2X isolated DC-DC power supply that provides a bipolar output of +15 V / –9 V, 2X IKW15N120BH6 IGBT, and LMV331 comparator and shunt resistor for over current detection.
This is a fully isolated half-bridge gate driver module that can be configured according to the user’s voltage and current requirements. The design consists of two galvanically isolated single-channel gate driver 1ED3124MC12H ICs and a dedicated 2X isolated DC-DC power supply that provides a bipolar output of +15 V / –9 V, 2X IKW15N120BH6 IGBT, and LMV331 comparator and shunt resistor for over current detection.
The board is configured by default for IGBT applications; however, it can also be configured to drive MOSFETs and SiC MOSFETs. Users can select the appropriate power device (IGBT, MOSFET, or SiC MOSFET) based on the required voltage level, power rating, and switching frequency. Suitable Pin to pin compatible RECOM DC-DC converter for MOSFETS, SiC MOSFET.
The gate driver IC can also be chosen according to the gate charge and capacitance of the selected device to ensure optimal switching performance. A list of compatible driver ICs and power device part numbers is provided below for reference.
The board can also accommodate lower-current compatible devices:
The module is based on:
Cookie preferences